Layer-by-layer growth in solution deposition of monocrystalline lead sulfide thin films on GaAs(111)-Reference-Cited by-同舟云学术

Layer-by-layer growth in solution deposition of monocrystalline lead sulfide thin films on GaAs(111)

Published:2019 Issue:8 Volume:3 Page:1538-1544
ISSN:2052-1537
Container-title:Materials Chemistry Frontiers
language:en
Short-container-title:Mater. Chem. Front.

Author:

Templeman Tzvi¹²³⁴,Perez Maayan¹²³⁴,Friedman Ofir¹²³⁴^ORCID,Abutbul Ran Eitan¹²³⁴,Shandalov Michael⁵⁶⁷⁴,Ezersky Vladimir¹²³⁴,Konovalov Oleg⁸⁹¹⁰¹¹^ORCID,Golan Yuval¹²³⁴^ORCID

Affiliation:

1. Department of Materials Engineering and the Ilse Katz Institute of Nanoscale Science and Technology

2. Ben Gurion University of the Negev

3. Be’er-Sheva 84105

4. Israel

5. Department of Physics

6. Nuclear Research Center Negev

7. Be'er Sheva

8. Beamline ID10

9. European Synchrotron Radiation Facility

10. Grenoble

11. France

Abstract

In situ synchrotron GIXD showed layer-by-layer growth in solution deposited monocrystalline thin films of lead sulfide on GaAs(111).

Funder

Israel Science Foundation

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2019/QM/C9QM00155G

Reference44 articles.

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