Interlayer exciton emission in a MoS2/VOPc inorganic/organic van der Waals heterostructure

Author:

Kong Yuhan12,Obaidulla Sk Md23,Habib Mohammad Rezwan2,Wang Zukun4,Wang Rong5ORCID,Khan Yahya2,Zhu Haiming4,Xu Mingsheng2ORCID,Yang Deren6ORCID

Affiliation:

1. Department of Polymer Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China

2. State Key Laboratory of Silicon Materials, School of Micro-Nano Electronics, Zhejiang University, Hangzhou 310027, P. R. China

3. Center of Excellence for Advanced Materials and Sensing Devices, Institute of Physics, Bijenička cesta 46, HR-10000 Zagreb, Croatia

4. Department of Chemistry, Zhejiang University, Hangzhou 310027, P. R. China

5. ZJU Hangzhou Global Sci & Technol Innovat Ctr, Adv Semicond Res Inst, Hangzhou 311215, P. R. China

6. State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China

Abstract

New emission is observed in the heterostructure built from MoS2 and VOPc. The appearance of the interlayer exciton emission is attributed to the carrier transition from the generated interface mid-gap states of VOPc to the ground states of MoS2.

Funder

Natural Science Foundation of Zhejiang Province

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Electrical and Electronic Engineering,Process Chemistry and Technology,Mechanics of Materials,General Materials Science

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