Fast-Response Micro-Phototransistor Based on MoS2/Organic Molecule Heterojunction

Author:

Andleeb Shaista123,Wang Xiaoyu24,Dong Haiyun2,Valligatla Sreeramulu2,Saggau Christian Niclaas123,Ma Libo2,Schmidt Oliver G.1235,Zhu Feng6

Affiliation:

1. Material Systems for Nanoelectronics, Chemnitz University of Technology, 09107 Chemnitz, Germany

2. Leibniz-Institute für Festköper- und Werkstoffforschung Dresden, 01069 Dresden, Germany

3. Research Center for Materials, Architectures, and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, 09126 Chemnitz, Germany

4. Department of Physics, School of Science, Hainan University, Haikou 570228, China

5. School of Science, Dresden University of Technology, 01069 Dresden, Germany

6. State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, China

Abstract

Over the past years, molybdenum disulfide (MoS2) has been the most extensively studied two-dimensional (2D) semiconductormaterial. With unique electrical and optical properties, 2DMoS2 is considered to be a promising candidate for future nanoscale electronic and optoelectronic devices. However, charge trapping leads to a persistent photoconductance (PPC), hindering its use for optoelectronic applications. To overcome these drawbacks and improve the optoelectronic performance, organic semiconductors (OSCs) are selected to passivate surface defects, tune the optical characteristics, and modify the doping polarity of 2D MoS2. Here, we demonstrate a fast photoresponse in multilayer (ML) MoS2 by addressing a heterojunction interface with vanadylphthalocyanine (VOPc) molecules. The MoS2/VOPc van der Waals interaction that has been established encourages the PPC effect in MoS2 by rapidly segregating photo-generated holes, which move away from the traps of MoS2 toward the VOPc molecules. The MoS2/VOPc phototransistor exhibits a fast photo response of less than 15 ms for decay and rise, which is enhanced by 3ordersof magnitude in comparison to that of a pristine MoS2-based phototransistor (seconds to tens of seconds). This work offers a means to realize high-performance transition metal dichalcogenide (TMD)-based photodetection with a fast response speed.

Publisher

MDPI AG

Subject

General Materials Science,General Chemical Engineering

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