Deposition of nonpolar m-plane InGaN/GaN multiple quantum wells on LiGaO2(100) substrates-Reference-Cited by-同舟云学术

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Deposition of nonpolar m-plane InGaN/GaN multiple quantum wells on LiGaO2(100) substrates

Published:2014 Issue:5 Volume:2 Page:801-805
ISSN:2050-7526
Container-title:J. Mater. Chem. C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Yang Weijia,Wang Wenliang,Lin Yunhao,Liu Zuolian,Zhou Shizhong,Qian Huirong,Gao Fangliang,Zhang Shuguang,Li Guoqiang

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2014/TC/C3TC31935K

Reference46 articles.

1. Achieve high-quality GaN films on La0.3Sr1.7AlTaO6 (LSAT) substrates by low-temperature molecular beam epitaxy

2. Epitaxial growth of 2 inch diameter homogeneous AlN single-crystalline films by pulsed laser deposition

3. Epitaxial Growth of High Quality Nonpolar InN Films on LiGaO2 Substrates

4. III-nitride photonic-crystal light-emitting diodes with high extraction efficiency

5. Growth and characterization of GaN-based LED wafers on La0.3Sr1.7AlTaO6 substrates

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1. Growth behavior and stress distribution of bulk GaN grown by Na-flux with HVPE GaN seed under near-thermodynamic equilibrium;Applied Surface Science;2022-03

2. Simulation analysis of UV –A band LEDs with BGaN single quantum well using SiC substrate for medical applications;2021 3rd International Conference on Signal Processing and Communication (ICPSC);2021-05-13

3. Numerical simulation of UV LEDs with GaN and BGaN single quantum well;Journal of Semiconductors;2019-03

4. Influence of Thickness of p-InGaN Layer on the Device Physics and Material Qualities of GaN-Based LEDs With p-GaN/ InGaN Heterojunction;IEEE Transactions on Electron Devices;2018-12

5. Implementation of slow and smooth etching of GaN by inductively coupled plasma;Journal of Semiconductors;2018-11

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