Stable and high yield growth of GaP and In0.2Ga0.8As nanowire arrays using In as a catalyst
Author:
Affiliation:
1. Université Paris-Saclay
2. CNRS
3. Centre de Nanosciences et de Nanotechnologies
4. Palaiseau
5. France
Abstract
We report the first investigation of indium as the vapor–liquid–solid catalyst of GaP and InGaAs nanowires grown by molecular beam epitaxy.
Funder
Agence Nationale de la Recherche
Publisher
Royal Society of Chemistry (RSC)
Subject
General Materials Science
Link
http://pubs.rsc.org/en/content/articlepdf/2020/NR/D0NR04139D
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