GaAs/GaInP nanowire solar cell on Si with state-of-the-art <i>V</i><sub>oc</sub> and quasi-Fermi level splitting-Reference-Cited by-同舟云学术

GaAs/GaInP nanowire solar cell on Si with state-of-the-art V_oc and quasi-Fermi level splitting

Published:2022 Issue:35 Volume:14 Page:12722-12735
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Tong Capucine¹²^ORCID,Delamarre Amaury²^ORCID,De Lépinau Romaric¹²^ORCID,Scaccabarozzi Andrea¹²,Oehler Fabrice²^ORCID,Harmand Jean-Christophe²^ORCID,Collin Stéphane¹²^ORCID,Cattoni Andrea¹²^ORCID

Affiliation:

1. Institut Photovoltaïque d'Ile-de-France (IPVF), Palaiseau F-91120, France

2. Centre de Nanosciences et de Nanotechnologies (C2N), CNRS, Université Paris-Saclay, F-91120 Palaiseau, France

Abstract

GaAs/GaInP nanowire solar cells epitaxially grown on a patterned Si substrate feature state-of-the-art open circuit voltage (0.65 V) and quasi-Fermi level splitting (0.84 eV at 1 sun, 1.01 eV at 81 suns), indicating high optoelectronic quality.

Funder

European Metrology Programme for Innovation and Research

Agence Nationale de la Recherche

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2022/NR/D2NR02652J

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