Tin(iv) chalcogenoether complexes as single source precursors for the chemical vapour deposition of SnE2 and SnE (E = S, Se) thin films-Reference-Cited by-同舟云学术

Tin(iv) chalcogenoether complexes as single source precursors for the chemical vapour deposition of SnE2 and SnE (E = S, Se) thin films

Published:2018 Issue:8 Volume:47 Page:2628-2637
ISSN:1477-9226
Container-title:Dalton Transactions
language:en
Short-container-title:Dalton Trans.

Author:

Gurnani Chitra¹²³⁴,Hawken Samantha L.⁵⁶⁷⁸,Hector Andrew L.⁵⁶⁷⁸^ORCID,Huang Ruomeng⁹⁶⁷⁸^ORCID,Jura Marek¹⁰¹¹¹²¹³⁸,Levason William⁵⁶⁷⁸^ORCID,Perkins James⁵⁶⁷⁸,Reid Gillian⁵⁶⁷⁸^ORCID,Stenning Gavin B. G.¹⁰¹¹¹²¹³⁸

Affiliation:

1. School of Natural Sciences

2. Mahindra Ecole Centrale

3. Hyderabad

4. India

5. Chemistry

6. University of Southampton

7. Southampton SO17 1BJ

8. UK

9. Electronic and Computer Science

10. ISIS Neutron and Muon Source

11. Rutherford Appleton Laboratory

12. Harwell Science and Innovation Campus

13. Didcot

Abstract

Distorted octahedral complexes of Sn(iv) with thio- and seleno-ether ligands have been used as single source precursors in low pressure CVD experiments under various conditions to deposit tin mono and dichalcogenide thin films.

Funder

Engineering and Physical Sciences Research Council

Science and Technology Facilities Council

Publisher

Royal Society of Chemistry (RSC)

Subject

Inorganic Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/DT/C7DT03848H

Reference38 articles.

1. High-performance photodetectors based on CVD-grown high-quality SnS2 nanosheets

2. Highly sensitive and fast phototransistor based on large size CVD-grown SnS2nanosheets