Crystallographic orientation control and optical properties of GaN nanowires-Reference-Cited by-同舟云学术

Crystallographic orientation control and optical properties of GaN nanowires

Published:2018 Issue:4 Volume:8 Page:2181-2187
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Wu Shaoteng¹²³⁴⁵,Wang Liancheng⁶⁷⁸⁴⁹^ORCID,Yi Xiaoyan¹²³⁴⁵,Liu Zhiqiang¹²³⁴⁵^ORCID,Yan Jianchang¹²³⁴⁵,Yuan Guodong¹²³⁴⁵,Wei Tongbo¹²³⁴⁵,Wang Junxi¹²³⁴⁵,Li Jinmin¹²³⁴⁵

Affiliation:

1. College of Materials Sciences and Opto-Electronic Technology

2. University of Chinese Academy of Sciences

3. Beijing

4. China

5. Research and Development Center for Semiconductor Lighting

6. Institute of Semiconductors

7. Chinese Academy of Sciences

8. Beijing 100083

9. State Key Laboratory of High Performance Complex Manufacturing

Abstract

We employ a versatile strategy to manipulate the crystallographic orientation of GaN NWs in a VLS-HVPE process.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/RA/C7RA11408G

Reference44 articles.

1. VAPOR‐LIQUID‐SOLID MECHANISM OF SINGLE CRYSTAL GROWTH

2. Metal-catalyzed semiconductor nanowires: a review on the control of growth directions

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4. Epitaxial growth of InP nanowires on germanium

5. Metalorganic Chemical Vapor Deposition Route to GaN Nanowires with Triangular Cross Sections

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