An Al-doped TiO<sub>2</sub> interfacial layer for effective hole injection characteristics of quantum-dot light-emitting diodes-Reference-Cited by-同舟云学术

An Al-doped TiO₂ interfacial layer for effective hole injection characteristics of quantum-dot light-emitting diodes

Published:2022 Issue:18 Volume:10 Page:7294-7303
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Kim Min Gye¹²,Shin Jae Seung¹²,Ma Jin Hyun¹,Jeong Jun Hyung¹,Han Dong Hee¹^ORCID,Kim Beom-Su³,Jeon Woojin¹^ORCID,Park Yongsup³⁴^ORCID,Kang Seong Jun¹²^ORCID

Affiliation:

1. Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin 17104, Republic of Korea

2. Integrated Education Institute for Frontier Science & Technology (BK21 Four), Kyung Hee University, Yongin 17104, Republic of Korea

3. Department of Physics and Research Institute for Basic Sciences, Kyung Hee University, Seoul 02447, Republic of Korea

4. Department of Information Display Kyung Hee University, Seoul 02447, Republic of Korea

Abstract

Al-doped TiO2 (ATO) interfacial layer improves the charge balance and the performance of quantum-dot light-emitting diodes (QLEDs).

Funder

National Research Foundation of Korea

Korea Basic Science Institute

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/TC/D2TC00678B

Reference53 articles.

1. Stability of Quantum Dots, Quantum Dot Films, and Quantum Dot Light‐Emitting Diodes for Display Applications

2. Nonblinking Quantum-Dot-Based Blue Light-Emitting Diodes with High Efficiency and a Balanced Charge-Injection Process

3. Polyethylenimine Ethoxylated-Mediated All-Solution-Processed High-Performance Flexible Inverted Quantum Dot-Light-Emitting Device

4. Magnetron-sputtered amorphous V2O5 hole injection layer for high performance quantum dot light-emitting diode

5. High‐Performance Quantum‐Dot Light‐Emitting Diodes Using NiO x Hole‐Injection Layers with a High and Stable Work Function

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