Affiliation:
1. Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Centre for High‐efficiency Display and Lighting Technology, School of Materials Henan University Kaifeng 475004 P. R. China
2. College of Physics and Optoelectronic Engineering Zhongyuan University of Technology Zhengzhou 450007 P. R. China
Abstract
AbstractThe low hole injection efficiency severely constrains the operational capability of blue quantum‐dot light‐emitting diodes (QLEDs). Constructing the structure of stepped energy levels is an effective approach to enhance the hole injection efficiency. Here, the dual hole injection structure is fabricated through the introduction of Ti3C2Tx film, in which its function is modulated by controlling the size of Ti3C2Tx nanosheets. Benefitting from a matched Fermi energy of Ti3C2Tx film, the Ti3C2Tx‐modified devices achieve a peak external quantum efficiency (EQE) of 15.89%, exhibiting a 67% increase compared to the reference devices with an EQE of 9.72%. The enhanced EQE can be attributed to the reduced energy barrier between indium tin oxide (ITO) and PEDOT:PSS, resulting from the incorporation of a Ti3C2Tx hole injection layer. In addition, the Ti3C2Tx layer effectively avoids the corrosion of the ITO electrode by acidic PEDOT:PSS, thereby enhancing the electrical stability of the ITO/PEDOT:PSS interface. The results provide a new approach to realize the high‐performance blue QLEDs devices.
Funder
Key Scientific Research Project of Colleges and Universities in Henan Province
National Key Research and Development Program of China
National Natural Science Foundation of China
Subject
Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials