Resonant tunneling induced large magnetoresistance in vertical van der Waals magnetic tunneling junctions based on type-II spin-gapless semiconductor VSi<sub>2</sub>P<sub>4</sub>-Reference-Cited by-同舟云学术

Resonant tunneling induced large magnetoresistance in vertical van der Waals magnetic tunneling junctions based on type-II spin-gapless semiconductor VSi₂P₄

Published:2024 Issue:2 Volume:12 Page:696-705
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Han Jiangchao¹²,Zhou Daming²³,Yang Wei²³,Lv Chen²³,Wang Xinhe²³^ORCID,Wei Guodong²³,Zhao Weisheng²³^ORCID,Lin Xiaoyang²³^ORCID,Sang Shengbo¹

Affiliation:

1. College of Electronic Information and Optical Engineering, Taiyuan University of Technology, Taiyuan 030024, China

2. National Key Lab of Spintronics, Institute of International Innovation, Beihang University, Yuhang District, Hangzhou, 311115, China

3. Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China

Abstract

Schematics (a and b) and eigenstates (c and d) of 1H (a and c) and 3H (b and d) devices.

Funder

National Natural Science Foundation of China

China Association for Science and Technology

Higher Education Discipline Innovation Project

Fundamental Research Funds for the Central Universities

Beijing Advanced Innovation Center for Big Data and Brain Computing

Beijing Municipal Natural Science Foundation

Publisher

Royal Society of Chemistry (RSC)

Subject