Synergistic combination of amorphous indium oxide with tantalum pentoxide for efficient electron transport in low-power electronics-Reference-Cited by-同舟云学术

Synergistic combination of amorphous indium oxide with tantalum pentoxide for efficient electron transport in low-power electronics

Published:2019 Issue:15 Volume:7 Page:4559-4566
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Park Song Yi¹²³⁴^ORCID,Heo Jungwoo⁵²³⁴^ORCID,Yoon Yung Jin¹²³⁴^ORCID,Kim Jae Won¹²³⁴^ORCID,Jang Hyungsu¹²³⁴^ORCID,Walker Bright⁶⁷⁸⁴^ORCID,Kim Jin Young¹²³⁴⁵^ORCID

Affiliation:

1. Department of Energy Engineering

2. Ulsan National Institute of Science and Technology (UNIST)

3. Ulsan 44919

4. South Korea

5. Department of Physics

6. Department of Chemistry

7. Kyung Hee University

8. Seoul 02447

Abstract

High-quality amorphous indium oxide thin films are obtained by exploiting a synergistic interaction with an underlying tantalum pentoxide layer.

Funder

National Research Foundation of Korea

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/TC/C9TC00054B

Reference37 articles.

1. The physics of amorphous-silicon thin-film transistors

2. Amorphous silicon thin-film transistors with 90° vertical nanoscale channel

3. Surface Engineering of Polycrystalline Silicon for Long-Term Mechanical Stress Endurance Enhancement in Flexible Low-Temperature Poly-Si Thin-Film Transistors

4. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

5. Metal oxides for optoelectronic applications

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