Dual-functional optoelectronic memories based on ternary hybrid floating gate layers-Reference-Cited by-同舟云学术

Dual-functional optoelectronic memories based on ternary hybrid floating gate layers

Published:2021 Issue:5 Volume:13 Page:3295-3303
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Li Qingyan¹²³⁴⁵^ORCID,Li Tengteng¹²³⁴⁵^ORCID,Zhang Yating¹²³⁴⁵^ORCID,Zhao Hongliang¹²³⁴⁵^ORCID,Li Jie¹²³⁴⁵^ORCID,Yao Jianquan¹²³⁴⁵

Affiliation:

1. Key Laboratory of Opto-Electronics Information Technology

2. Ministry of Education

3. School of Precision Instruments and Opto-Electronics Engineering

4. Tianjin University

5. Tianjin 300072

Abstract

The dual-functional storage operations of electric programming holes/light erasing and light programming electrons/electric erasing can be realized in the optoelectronic memories with ternary hybrid floating gate layers.

Funder

National Natural Science Foundation of China

National Key Research and Development Program of China

Shenzhen Fundamental Research Program

Department of Education of Guangdong Province

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2021/NR/D0NR09066B

Reference53 articles.

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4. Mimicking Neuroplasticity in a Hybrid Biopolymer Transistor by Dual Modes Modulation

5. Optical memory characteristics of solution-processed organic transistors with self-organized organic floating gates for printable multi-level storage devices

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