Optical memory characteristics of solution-processed organic transistors with self-organized organic floating gates for printable multi-level storage devices

Author:

Shiono Fumiya,Abe Hayato,Nagase TakashiORCID,Kobayashi Takashi,Naito Hiroyoshi

Funder

Grant-in-Aids for Scientific Research (C)

Scientific Research (B)

Japan Society for the Promotion of Science (JSPS)

Support Center for Advanced Telecommunications Technology Research (SCAT), Foundation, Japan

Grant-in-Aid for Scientific Research

New Polymeric Materials Based on Element-Blocks

Ministry of Education, Culture, Sports, Science and Technology, Japan

Grant-in-Aid for Scientific Research (A)

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Materials Chemistry,Condensed Matter Physics,General Chemistry,Biomaterials,Electronic, Optical and Magnetic Materials

Reference40 articles.

1. Polymer and organic nonvolatile memory devices;Heremans;Chem. Mater.,2011

2. Towards printable organic thin film transistor based flash memory devices;Leong;J. Mater. Chem.,2011

3. Memory effect of a polymer thin-film transistor with self-assembled gold nanoparticles in the gate dielectric;Liu;IEEE Trans. Nanotechnol.,2006

4. Nonvolatile nano-floating gate memory devices based on pentacene semiconductors and organic tunneling insulator layers;Kim;Appl. Phys. Lett.,2010

5. Morphology control of tunneling dielectric towards high-performance organic field-effect transistor nonvolatile memory;She;Org. Electron.,2012

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