Study of the perpendicular self-assembly of a novel high-χ block copolymer without any neutral layer on a silicon substrate-Reference-Cited by-同舟云学术

Study of the perpendicular self-assembly of a novel high-χ block copolymer without any neutral layer on a silicon substrate

Published:2019 Issue:7 Volume:9 Page:3828-3837
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Zhang Baolin¹²³⁴⁵^ORCID,Liu Weichen⁵⁶⁷⁴,Meng Lingkuan⁸⁹⁴¹⁰¹¹^ORCID,Zhang Zhengping¹²³⁴,Zhang Libin⁵⁶⁷⁴,Wu Xing¹²¹³⁴,Dai Junyan¹²¹³⁴,Mao Guoping¹²¹³⁴,Wei Yayi⁵⁶⁷⁴

Affiliation:

1. College of Big Data and Information Engineering

2. Guizhou University

3. Guiyang 550025

4. P. R. China

5. Integrated Circuit Advanced Process Center (ICAC)

6. Institute of Microelectronics of Chinese Academy of Sciences (IME CAS)

7. Beijing 100029

8. The Integrated Circuit Materials & Components Industry Technology Innovative Alliance

9. Beijing 100083

10. School of Electronic Engineering

11. Chengdu Technological University

12. Jiangsu HanTop Photo-Materials Co., Ltd

13. Shanghai

Abstract

A novel type of high-χ block copolymer, polystyrene-block-polycarbonate (PS-b-PC), which contains an active –NH– group on the polymer backbone between the PS block and the PC block, has been successfully synthesized.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/RA/C8RA10319D

Reference47 articles.

1. Electrical Biomolecule Detection Using Nanopatterned Silicon via Block Copolymer Lithography

2. Robust Superhydrophobicity in Large-Area Nanostructured Surfaces Defined by Block-Copolymer Self Assembly

3. A straightforward and CMOS-compatible nanofabrication technique of periodic SiO2 nanohole arrays

4. Visible photoassisted room-temperature oxidizing gas-sensing behavior of Sn2S3 semiconductor sheets through facile thermal annealing

5. Two-Dimensional Pattern Formation Using Graphoepitaxy of PS-b-PMMA Block Copolymers for Advanced FinFET Device and Circuit Fabrication

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