Effect of external electric field on the electronic properties of the AlAs/SiC van der Waals heterostructure-Reference-Cited by-同舟云学术

Effect of external electric field on the electronic properties of the AlAs/SiC van der Waals heterostructure

Published:2023 Issue:40 Volume:25 Page:27766-27773
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Zhang Zicheng¹,Wan Changxin¹,Li Heng²³,Liu Chunsheng¹^ORCID,Meng Lan¹^ORCID,Yan Xiaohong¹

Affiliation:

1. College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing 210023, China

2. Jiujiang Resarch Institute of Xiamen University, Jiujiang, 332000, China

3. Fujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen, 361005, China

Abstract

2D AlAs/SiC heterostructure has a type-II band alignment with flat valence bands near the Fermi level. Under the external electric field, the band gap can be tuned continuously but the band structure maintains a stable type-II band alignment.

Funder

National Natural Science Foundation of China

Fundamental Research Funds for the Central Universities

Nanjing University

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2023/CP/D3CP03031H

Reference43 articles.

1. Electric Field Effect in Atomically Thin Carbon Films