Improvement of the performance in Cr-doped ZnO memory devices via control of oxygen defects
Author:
Affiliation:
1. Department of Photonics
2. National Cheng Kung University
3. Tainan 701
4. Taiwan
5. Institute of Microelectronics
Abstract
The depth-profiling XPS spectra results are strong evidence that the resistive switching effects are applicable to oxygen vacancy-based conductive mechanisms.
Funder
Ministry of Education
Ministry of Science and Technology, Taiwan
Publisher
Royal Society of Chemistry (RSC)
Subject
General Chemical Engineering,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2019/RA/C8RA10112D
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