Improvement of the performance in Cr-doped ZnO memory devices via control of oxygen defects-Reference-Cited by-同舟云学术

Improvement of the performance in Cr-doped ZnO memory devices via control of oxygen defects

Published:2019 Issue:6 Volume:9 Page:2941-2947
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Li Sih-Sian¹²³⁴^ORCID,Su Yan-Kuin¹²³⁴⁵

Affiliation:

1. Department of Photonics

2. National Cheng Kung University

3. Tainan 701

4. Taiwan

5. Institute of Microelectronics

Abstract

The depth-profiling XPS spectra results are strong evidence that the resistive switching effects are applicable to oxygen vacancy-based conductive mechanisms.

Funder

Ministry of Education

Ministry of Science and Technology, Taiwan

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/RA/C8RA10112D

Reference42 articles.

1. The emergence of spin electronics in data storage

2. Nanoionics-based resistive switching memories

3. Resistive switching in transition metal oxides

4. Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

5. Emerging memory technologies: Trends, challenges, and modeling methods

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