Thickness-dependent bandgap tunable molybdenum disulfide films for optoelectronics-Reference-Cited by-同舟云学术

Thickness-dependent bandgap tunable molybdenum disulfide films for optoelectronics

Published:2016 Issue:112 Volume:6 Page:110604-110609
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Zhu Juntong¹²³⁴⁵,Wu Jiang⁶⁷⁸⁹,Sun Yinghui¹²³⁴⁵,Huang Jianwen¹²³⁴⁵,Xia Yufei¹²³⁴⁵,Wang Hao¹²³⁴⁵,Wang Haibo¹²³⁴⁵,Wang Yun¹²³⁴⁵,Yi Qinghua¹²³⁴⁵,Zou Guifu¹²³⁴⁵

Affiliation:

1. College of Physics

2. Optoelectronics and Energy

3. Institute of Chemical Power Sources & Collaborative Innovation Center of Suzhou Nano Science and Technology

4. Soochow University

5. Suzhou 215006

6. Department of Electronic and Electrical Engineering

7. University College London

8. London WC1E 7JE

9. UK

Abstract

Thickness-controlled uniform MoS₂ films are grown by polymer-assisted deposition approach from 50 nm to 2.5 nm, corresponding to bandgaps modulated from 1.50 eV to 1.64 eV. The photoresponse test demonstrates as-grown MoS₂ has fast response to light.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/RA/C6RA22496B

Reference44 articles.

1. Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform

2. MoS2 Nanosheet Phototransistors with Thickness-Modulated Optical Energy Gap

3. High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity

4. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

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