Time evolution of the defect states at the surface of MoS2

Abstract

MoS2 has generated significant attention due to its unique electronic properties and versatile applications. Being a van der Waals material, MoS2 is expected to exhibit an inert surface due to lack of dangling bond. However, our photoemission study finds MoS2 to be highly sensitive toward residual gases. The position of the valence band maximum (VBM) shifts even in a vacuum of 10−10 Torr. We find this to be due to CO adsorption causing unintentional electron doping. The time evolution of the position of VBM is exponential, and it reaches two different saturation points, depending on whether the sample is exposed to ultraviolet (UV) radiation or not. Our XPS (x-ray photoemission spectroscopy) study shows no time-dependent escape of sulfur, which was in a previous study attributed to a VBM shift. The VBM shift can be reversed by annealing, sputtering, and UV light, which desorb CO gases. The study shows that the MoS2 surface is easily doped, which offers the possibility of using it as a sensor but in many other applications could diminish device performance and needs to be considered.