Review of defect chemistry in fluorite-structure ferroelectrics for future electronic devices-Reference-Cited by-同舟云学术

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Review of defect chemistry in fluorite-structure ferroelectrics for future electronic devices

Published:2020 Issue:31 Volume:8 Page:10526-10550
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Park Min Hyuk¹²³⁴^ORCID,Lee Dong Hyun¹²³⁴^ORCID,Yang Kun¹²³⁴,Park Ju-Yong¹²³⁴,Yu Geun Taek¹²³⁴,Park Hyeon Woo⁵⁶⁷⁸⁴,Materano Monica⁹¹⁰¹¹,Mittmann Terence⁹¹⁰¹¹,Lomenzo Patrick D.⁹¹⁰¹¹^ORCID,Mikolajick Thomas⁹¹⁰¹¹¹²¹³^ORCID,Schroeder Uwe⁹¹⁰¹¹^ORCID,Hwang Cheol Seong⁵⁶⁷⁸⁴^ORCID

Affiliation:

1. School of Materials Science and Engineering

2. Pusan National University

3. Busan 46241

4. Republic of Korea

5. Department of Materials Science and Engineering & Inter-university Semiconductor Research Center

6. College of Engineering

7. Seoul National University

8. Seoul 08826

9. NaMLab gGmbH

10. Dresden 01187

11. Germany

12. Chair of Nanoelectronic Materials

13. Dresden 01069

Abstract

The defect chemistry and its effect on nanoscale polymorphism and physical/electrical properties in fluorite-structure ferroelectrics are reviewed.

Funder

National Research Foundation of Korea

Ministry of Trade, Industry and Energy

Bundesministerium für Wirtschaft und Technologie

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/TC/D0TC01695K

Reference185 articles.

1. Ferroelectricity in hafnium oxide thin films

2. Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors

3. Review and perspective on ferroelectric HfO2-based thin films for memory applications

4. A comprehensive study on the mechanism of ferroelectric phase formation in hafnia-zirconia nanolaminates and superlattices

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