Flexible electric-double-layer thin film transistors based on a vertical InGaZnO4 channel-Reference-Cited by-同舟云学术

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Flexible electric-double-layer thin film transistors based on a vertical InGaZnO4 channel

Published:2021 Issue:29 Volume:11 Page:17910-17913
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Lei Liuhui¹²³⁴⁵,Tan Yuanyuan⁶⁷⁸,Yuan Xing¹²³⁴⁵,Dou Wei¹²³⁴⁵^ORCID,Zhang Jiale¹²³⁴⁵,Wang Yongkang¹²³⁴⁵,Zeng Sizhe¹²³⁴⁵,Deng Shenyi¹²³⁴⁵,Guo Haoting¹²³⁴⁵,Zhou Weichang¹²³⁴⁵,Tang Dongsheng¹²³⁴⁵

Affiliation:

1. School of Physics and Electronics

2. Key Laboratory of Low Dimensional Quantum Structures and Quantum Control

3. Key Laboratory for Matter Microstructure and Function of Hunan Province

4. Synergetic Innovation Centre for Quantum Effects and Application

5. Hunan Normal University

6. Hunan First Normal University

7. Changsha

8. People's Republic of China

Abstract

Flexible electric-double-layer (EDL) thin film transistors (TFTs) based on a vertical InGaZnO₄ (IGZO) channel are fabricated at room temperature.

Funder

Hunan Normal University

National Natural Science Foundation of China

Natural Science Foundation of Hunan Province

Guangxi University

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/RA/D1RA02155A

Reference16 articles.

1. Flexible and stretchable metal oxide nanofiber networks for multimodal and monolithically integrated wearable electronics

2. Reverse Offset Printing of Semidried Metal Acetylacetonate Layers and Its Application to a Solution-Processed IGZO TFT Fabrication

3. Carbohydrate-Assisted Combustion Synthesis To Realize High-Performance Oxide Transistors

4. High performance top gate a-IGZO TFT utilizing siloxane hybrid material as a gate insulator

5. Amorphous IGZO TFT with High Mobility of ∼70 cm2/(V s) via Vertical Dimension Control Using PEALD

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