Fabrication and improved photoelectrochemical properties of a transferred GaN-based thin film with InGaN/GaN layers-Reference-Cited by-同舟云学术

Fabrication and improved photoelectrochemical properties of a transferred GaN-based thin film with InGaN/GaN layers

Published:2017 Issue:32 Volume:9 Page:11504-11510
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Cao Dezhong¹²³⁴⁵^ORCID,Xiao Hongdi¹²³⁴^ORCID,Gao Qingxue¹²³⁴,Yang Xiaokun¹²³⁴,Luan Caina¹²³⁴,Mao Hongzhi¹²³⁴,Liu Jianqiang⁵²³⁴,Liu Xiangdong⁵²³⁴⁶

Affiliation:

1. School of Microelectronics

2. Shandong University

3. Jinan 250100

4. China

5. School of physics

6. State Key Laboratory of Crystal Materials

Abstract

The mesoporous GaN-based thin films were transferred onto quartz and n-Si substrates. Compared to the film on quartz substrate, the film on n-Si substrate exhibited better photoelectrochemical performance.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2017/NR/C7NR03622A

Reference32 articles.

1. Controllable Synthesis of Vapor-Liquid-Solid Grown GaN Nanowires for Photoelectrochemical Water Splitting Applications

2. Nitrogen-Doped ZnO Nanowire Arrays for Photoelectrochemical Water Splitting

3. ZnO nanocoral structures for photoelectrochemical cells

4. Transport properties of two finite armchair graphene nanoribbons

5. Exfoliated thin Bi2MoO6 nanosheets supported on WO3 electrode for enhanced photoelectrochemical water splitting

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