Multiple polarization states in symmetric ferroelectric heterostructures for multi-bit non-volatile memories-Reference-Cited by-同舟云学术

Multiple polarization states in symmetric ferroelectric heterostructures for multi-bit non-volatile memories

Published:2017 Issue:48 Volume:9 Page:19271-19278
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Boni Georgia A.¹²³^ORCID,Filip Lucian D.¹²³^ORCID,Chirila Cristina¹²³^ORCID,Pasuk Iuliana¹²³,Negrea Raluca¹²³,Pintilie Ioana¹²³^ORCID,Pintilie Lucian¹²³^ORCID

Affiliation:

1. National Institute of Materials Physics

2. Magurele

3. Romania

Abstract

Individually accessible polarization states in multilayer ferroelectric-insulator structures for multi-bit memories.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2017/NR/C7NR06354G

Reference36 articles.

1. M. E. Lines and A. M.Glass , Principles and Applications of Ferroelectrics and Related Materials , Clarendon Press, Oxford University Press , Oxford; New York , 2001

2. J. F. Scott , Ferroelectric Memories , Springer , Berlin, New York , 2000

3. Pushing towards the digital storage limit

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