A six-level ferroelectric storage cell based on a bidirectional imprint field-Reference-Cited by-同舟云学术

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A six-level ferroelectric storage cell based on a bidirectional imprint field

Published:2024 Issue: Volume: Page:
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Kim Chaeheon¹,Hwang Junghyeon¹,Shin Hunbeom¹,Ahn Jinho²,Jeon Sanghun¹^ORCID

Affiliation:

1. School of Electrical Engineering Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, South Korea

2. Division of Materials Science and Engineering Hanyang University, 222, Wangsimni-ro, Seongdong-gu, Seoul, Republic of Korea

Abstract

In this paper, we propose and experimentally demonstrate a six-level ferroelectric cell with six switchable polarization states using a novel fixed-charge method.

Funder

Ministry of Science and ICT, South Korea

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/TC/D4TC01960A

Reference53 articles.

1. Breaking the von Neumann bottleneck: architecture-level processing-in-memory technology

2. Dual-Mode Operations of Self-Rectifying Ferroelectric Tunnel Junction Crosspoint Array for High-Density Integration of IoT Devices

3. F. P.Fengler ; M.Pešić ; S.Starschich ; T.Schneller ; U.Böttger ; T.Schenk ; M. H.Park ; T.Mikolajick and U.Schroeder Comparison of hafnia and PZT based ferroelectrics for future non-volatile FRAM applications. In 2016 46th European Solid-State Device Research Conference (ESSDERC), 2016; IEEE: pp 369-372

4. 1T Non-Volatile Memory Design Using Sub-10nm Ferroelectric FETs

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