Identifying chemical and physical changes in wide-gap semiconductors using real-time and near ambient-pressure XPS-Reference-Cited by-同舟云学术

Identifying chemical and physical changes in wide-gap semiconductors using real-time and near ambient-pressure XPS

Published:2022 Issue: Volume:236 Page:191-204
ISSN:1359-6640
Container-title:Faraday Discussions
language:en
Short-container-title:Faraday Discuss.

Author:

Astley Simon¹,Hu Di¹,Hazeldine Kerry¹^ORCID,Ash Johnathan¹,Cross Rachel E.¹^ORCID,Cooil Simon¹²,Allen Martin W.³^ORCID,Evans James⁴,James Kelvin⁴,Venturini Federica⁵,Grinter David C.⁵,Ferrer Pilar⁵^ORCID,Arrigo Rosa⁵,Held Georg⁵^ORCID,Williams Gruffudd T.⁶,Evans D. Andrew¹^ORCID

Affiliation:

1. Department of Physics, Aberystwyth University, Aberystwyth SY23 3BZ, UK

2. Centre for Materials Science and Nanotechnology, University of Oslo, Oslo, 0318, Norway

3. Department of Electrical and Computer Engineering, University of Canterbury, Christchurch 8014, New Zealand

4. Diamond Centre Wales Ltd, Talbot Green, RCT, CF72 9FG, UK

5. Diamond Light Source, Harwell Science and Innovation Campus, Didcot, OX11 0DE, UK

6. Element Six Ltd., Global Innovation Centre, Harwell, OX11 0QR, UK

Abstract

The temperature-dependence of photoemission from a gold alloy, n-type β-Ga2O3 and p-type diamond reveals reversible and irreversible changes in energy, due to changes in surface chemistry, band-bending, thermal expansion and a surface photovoltage.

Funder

European Regional Development Fund

Engineering and Physical Sciences Research Council

Llywodraeth Cymru

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/FD/D1FD00119A

Reference45 articles.

1. Quantitative XPS