Modulation of electrical properties in MoTe<sub>2</sub> by XeF<sub>2</sub>-mediated surface oxidation-Reference-Cited by-同舟云学术

Modulation of electrical properties in MoTe₂ by XeF₂-mediated surface oxidation

Author:

Ji Eunji¹,Kim Jong Hun¹²³,Lee Wanggon⁴,Shin June-Chul²,Seo Hyungtak⁵^ORCID,Ihm Kyuwook⁶,Park Jin-Woo¹^ORCID,Lee Gwan-Hyoung²³⁷⁸^ORCID

Affiliation:

1. Department of Material Science and Engineering, Yonsei University, Seoul, 03722, Korea

2. Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Korea

3. Research Institute of Advanced Materials (RIAM), Seoul National University, Seoul 08826, Korea

4. Department of Energy Systems Research, Ajou University, Suwon 16499, Republic of Korea

5. Department of Materials Science and Engineering, Ajou University, Suwon 16499, Republic of Korea

6. Department of Physics and Pohang Accelerator Laboratory, Pohang University of Science and Technology, 37673, Pohang, Korea

7. Institute of Engineering Research, Seoul National University, Seoul 08826, Korea

8. Institute of Applied Physics, Seoul National University, Seoul 08826, Korea

Abstract

Transition metal dichalcogenides (TMDs) are promising candidates for the semiconductor industry owing to their superior electrical properties.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Engineering,General Materials Science,General Chemistry,Atomic and Molecular Physics, and Optics,Bioengineering

Link

Reference52 articles.

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