Novel Optical and Electrical Transport Properties in Atomically Thin WSe2/MoS2p-n Heterostructures-Reference-Cited by-同舟云学术

Novel Optical and Electrical Transport Properties in Atomically Thin WSe2/MoS2p-n Heterostructures

Published:2015-04-16 Issue:5 Volume:1 Page:1400066
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Huo Nengjie¹,Tongay Sefaattin²,Guo Wenli³,Li Renxiong¹,Fan Chao¹,Lu Fangyuan¹,Yang Juehan¹,Li Bo¹,Li Yongtao¹,Wei Zhongming¹

Affiliation:

1. State Key Laboratory for Superlattices and Microstructures; Institute of Semiconductors Chinese Academy of Sciences; P.O. Box 912 Beijing 100083 China

2. School for Engineering of Matter; Transport and Energy Arizona State University; Tempe AZ 85287 USA

3. Department of Physics; City University of New York/QCC; Bayside NY 11364 USA

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/aelm.201400066/fullpdf

Reference45 articles.

1. Fabrication of Flexible MoS2Thin-Film Transistor Arrays for Practical Gas-Sensing Applications

2. Few-Layer MoS2 with High Broadband Photogain and Fast Optical Switching for Use in Harsh Environments

3. Broad-Range Modulation of Light Emission in Two-Dimensional Semiconductors by Molecular Physisorption Gating

4. Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect Transistors

5. Control of valley polarization in monolayer MoS2 by optical helicity

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