Magnetic anisotropy and ferroelectric-driven magnetic phase transition in monolayer Cr2Ge2Te6-Reference-Cited by-同舟云学术

Magnetic anisotropy and ferroelectric-driven magnetic phase transition in monolayer Cr₂Ge₂Te₆

Author:

Liu Wen-Rong¹^ORCID,Dong Xiao-Jing²,Lv Ye-Zhu¹,Ji Wei-Xiao¹^ORCID,Cao Qiang¹,Wang Pei-Ji¹^ORCID,Li Feng¹,Zhang Chang-Wen¹

Affiliation:

1. School of Physics and Technology, Institute of Spintronics, University of Jinan, Jinan, Shandong, 250022, People's Republic of China

2. School of Physics and Physical Engineering, Qufu Normal University, Qufu, Shandong, 273100, People's Republic of China

Abstract

The combination of ML-CGT and Sc2CO2 provides a way for the design of new non-volatile FE memory devices.

Funder

Taishan Scholar Foundation of Shandong Province

Natural Science Foundation of Shandong Province

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

Reference82 articles.

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