Realization of Dual Anomalous Valley Hall Effect in Antiferromagnetic HfN<sub>2</sub>/MnPSe<sub>3</sub> Heterostructure-Reference-Cited by-同舟云学术

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Realization of Dual Anomalous Valley Hall Effect in Antiferromagnetic HfN₂/MnPSe₃ Heterostructure

Published:2024-01-17 Issue:2 Volume:6 Page:679-687
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Dong Xiao-jing¹^ORCID,Jia Kang¹^ORCID,Ji Wei-xiao²,Li Sheng-shi²^ORCID,Zhang Chang-Wen¹²

Affiliation:

1. School of Physics and Physical Engineering, Qufu Normal University, Qufu, Shandong 273100, People’s Republic of China

2. School of Physics and Technology, Institute of Spintronics, University of Jinan, Jinan, Shandong 250022, People’s Republic of China

Funder

Taishan Scholar Project of Shandong Province

National Natural Science Foundation of China

Natural Science Foundation of Shandong Province

Independent Cultivation Program of Innovation Team of Jinan City

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.3c01032

Reference51 articles.

1. Valley filter and valley valve in graphene

2. Valley-Contrasting Physics in Graphene: Magnetic Moment and Topological Transport

3. Valleytronics in 2D materials

4. Electronic-correlation induced sign-reversible Berry phase and quantum anomalous valley Hall effects in Janus monolayer OsClBr

5. Strain-engineering induced topological phase transitions and multiple valley states in Janus monolayer VCSiN₄

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