Flipping growth orientation of nanographitic structures by plasma enhanced chemical vapor deposition-Reference-Cited by-同舟云学术

Flipping growth orientation of nanographitic structures by plasma enhanced chemical vapor deposition

Published:2015 Issue:111 Volume:5 Page:91922-91931
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Ghosh Subrata¹²³⁴,Ganesan K.¹²³⁴,Polaki S. R.¹²³⁴,Ilango S.¹²³⁴,Amirthapandian S.¹²³⁴,Dhara S.¹²³⁴,Kamruddin M.¹²³⁴,Tyagi A. K.¹²³⁴

Affiliation:

1. Materials Science Group

2. Indira Gandhi Centre for Atomic Research

3. Kalpakkam-603102

4. India

Abstract

Nanographitic structures (NGSs) with a multitude of morphological features are grown on SiO₂/Si substrates by electron cyclotron resonance-plasma enhanced chemical vapor deposition (ECR-PECVD).

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2015/RA/C5RA20820C

Reference37 articles.

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2. Nanostructured carbon for energy storage and conversion

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