The direct growth of planar and vertical graphene on Si(100) <i>via</i> microwave plasma chemical vapor deposition: synthesis conditions effects-Reference-Cited by-同舟云学术

The direct growth of planar and vertical graphene on Si(100) via microwave plasma chemical vapor deposition: synthesis conditions effects

Published:2022 Issue:29 Volume:12 Page:18759-18772
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Meškinis Š.¹^ORCID,Vasiliauskas A.¹,Guobienė A.¹^ORCID,Talaikis M.²^ORCID,Niaura G.²,Gudaitis R.¹

Affiliation:

1. Institute of Materials Science, Kaunas University of Technology, K. Baršausko St. 59, LT51423 Kaunas, Lithuania

2. Department of Organic Chemistry, Center for Physical Sciences and Technology, Saulėtekio av. 3, LT-10257 Vilnius, Lithuania

Abstract

In the present research, graphene was synthesized directly on a Si(100) substrate via combining direct microwave plasma-enhanced chemical vapor deposition and protective enclosure.

Funder

European Social Fund

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/RA/D2RA02370A

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