Zn vacancy induced ferromagnetism in K doped ZnO-Reference-Cited by-同舟云学术

Zn vacancy induced ferromagnetism in K doped ZnO

Published:2015 Issue:45 Volume:3 Page:11953-11958
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Wang Yiren¹²³⁴,Piao Jingyuan¹²³⁴,Xing Guozhong¹²³⁴,Lu Yunhao¹⁵⁶,Ao Zhimin⁷⁸⁹³⁴,Bao Nina¹⁰¹¹¹²,Ding Jun¹⁰¹¹¹²,Li Sean¹²³⁴,Yi Jiabao¹²³⁴

Affiliation:

1. School of Materials Science and Engineering

2. UNSW

3. Sydney

4. Australia

5. Zhejiang University

6. China

7. Centre for Clean Energy Technology

8. School of Mathematical and Physical Sciences

9. University of Technology

10. Department of Materials Science and Engineering

11. National University of Singapore

12. Singapore

Abstract

K doped ZnO shows room temperature ferromagnetism from both theoretical and experimental studies. This ferromagnetism is mainly attributed to the formation of the Zn vacancy. The K dopants can stabilize the Zn vacancy by forming a defect complex and K substitution can induce magnetism via lattice distortion.

Funder

Australian Research Council

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2015/TC/C5TC02936H

Reference42 articles.

1. (Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs

2. Making Nonmagnetic Semiconductors Ferromagnetic

3. Transport properties and origin of ferromagnetism in (Ga,Mn)As