Configurable multi-state non-volatile memory behaviors in Ti3C2nanosheets-Reference-Cited by-同舟云学术

Configurable multi-state non-volatile memory behaviors in Ti3C2nanosheets

Author:

Ding Guanglong¹²³⁴⁵,Zeng Kelin⁶²³⁴,Zhou Kui¹²³⁴,Li Zongxiao⁶²³⁴,Zhou Ye⁶²³⁴^ORCID,Zhai Yongbiao¹²³⁴,Zhou Li¹²³⁴,Chen Xiaoli¹²³⁴,Han Su-Ting¹²³⁴^ORCID

Affiliation:

1. College of Electronic Science and Technology

2. Shenzhen University

3. Shenzhen 518060

4. P. R. China

5. Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province

6. Institute for Advanced Study

Abstract

A multi-state information storage state could be achievedviaa configurable SET process with non-volatile devices based on Ti₃C₂nanosheets.

Funder

National Natural Science Foundation of China

Shenzhen Science and Technology Innovation Commission

Guangdong Science and Technology Department

Department of Education of Guangdong Province

National Taipei University of Technology

Shenzhen University

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

Reference65 articles.

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