Topological quantum devices: a review-Reference-Cited by-同舟云学术

Topological quantum devices: a review

Published:2023 Issue:31 Volume:15 Page:12787-12817
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Jin Kyung-Hwan¹^ORCID,Jiang Wei²^ORCID,Sethi Gurjyot³,Liu Feng³

Affiliation:

1. Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang 37673, Republic of Korea

2. School of Physics, Beijing Institute of Technology, Beijing 100081, China

3. Department of Materials Science and Engineering, University of Utah, Salt Lake City, Utah 84112, USA

Abstract

This review discusses recent advancements in topological quantum devices, focusing on topological spintronic, electronic, and quantum optoelectronic devices.

Funder

Beijing Institute of Technology Research Fund Program for Young Scholars

Institute for Basic Science

National Natural Science Foundation of China

Basic Energy Sciences

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2023/NR/D3NR01288C

Reference328 articles.

1. Quantized Hall Conductance in a Two-Dimensional Periodic Potential

2. New Method for High-Accuracy Determination of the Fine-Structure Constant Based on Quantized Hall Resistance

3. Model for a Quantum Hall Effect without Landau Levels: Condensed-Matter Realization of the "Parity Anomaly"

4. Z2Topological Order and the Quantum Spin Hall Effect

5. Quantum Spin Hall Effect in Graphene

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Coexistence of Kondo effect and Weak anti-localization in Topological insulator/Ferromagnetic heterostructure;Applied Surface Science;2024-11

2. Dynamics of symmetry-protected topological matter on a quantum computer;Physical Review B;2024-08-08

3. Duality of a coiled phononic crystal enables reflectionless interfaces;APL Materials;2024-06-01

4. Group IV topological quantum alloy and the role of short-range order: the case of Ge-rich Ge1–xPbx;npj Computational Materials;2024-04-25

5. 3D Carbon Allotropes: Topological Quantum Materials with Obstructed Atomic Insulating Phases, Multiple Bulk‐Boundary Correspondences, and Real Topology;Advanced Functional Materials;2024-04-16