Interface engineering for gain perovskite photodetectors with extremely high external quantum efficiency-Reference-Cited by-同舟云学术

Interface engineering for gain perovskite photodetectors with extremely high external quantum efficiency

Published:2020 Issue:54 Volume:10 Page:32976-32983
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Zhao Xinyu¹²³⁴⁵,Huang Lixiang¹²³⁴⁵,Wang Yukun¹²³⁴⁵,Zhu Xinglin¹²³⁴⁵,Li Lei¹²³⁴⁵,Li Guoxin¹²³⁴⁵,Sun Wenhong¹²³⁴⁵

Affiliation:

1. Research Center for Optoelectronic Materials and Devices

2. School of Physical Science and Technology

3. Guangxi University

4. Nanning 530004

5. China

Abstract

Efficient CH₃NH₃PbI₃ photodetectors (PDs) with an extremely high gain of the maximum external quantum efficiency (EQE) of 140 000% within the ultraviolet region to the near infrared region (NIR) and an extremely high responsivity (R) under a low bias of −5 V were successfully fabricated.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/RA/D0RA06618D

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