Layer-polarized anomalous Hall effects in valleytronic van der Waals bilayers-Reference-Cited by-同舟云学术

Layer-polarized anomalous Hall effects in valleytronic van der Waals bilayers

Published:2023 Issue:2 Volume:10 Page:483-490
ISSN:2051-6347
Container-title:Materials Horizons
language:en
Short-container-title:Mater. Horiz.

Author:

Zhang Ting¹,Xu Xilong²,Huang Baibiao¹^ORCID,Dai Ying¹^ORCID,Kou Liangzhi²^ORCID,Ma Yandong¹

Affiliation:

1. School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Shandanan Str. 27, Jinan 250100, People's Republic of China

2. School of Mechanical, Medical and Process Engineering, Queensland University of Technology, Garden Point Campus, Brisbane, Queensland 4001, Australia

Abstract

Using model analysis, we reveal that the sliding ferroelectricity will couple with A-type antiferromagnetism to form the layer-locked Berry curvature in valleytronic van der Waals bilayers, showing the observation of the long-sought LP-AHE.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Shandong Province

Key Technology Research and Development Program of Shandong

Publisher

Royal Society of Chemistry (RSC)

Subject

Electrical and Electronic Engineering,Process Chemistry and Technology,Mechanics of Materials,General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2023/MH/D2MH00906D

Reference45 articles.

1. Berry curvature memory through electrically driven stacking transitions