Electrical Control of the Valley–Layer Hall Effect in Ferromagnetic Bilayer Lattices-Reference-Cited by-同舟云学术

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Electrical Control of the Valley–Layer Hall Effect in Ferromagnetic Bilayer Lattices

Published:2024-08-20 Issue:34 Volume:15 Page:8759-8765
ISSN:1948-7185
Container-title:The Journal of Physical Chemistry Letters
language:en
Short-container-title:J. Phys. Chem. Lett.

Author:

Cheng Haomiao¹^ORCID,Chen Hongxin¹^ORCID,Hu Guichao¹^ORCID,Yuan Xiaobo¹^ORCID,Ren Junfeng¹²^ORCID,Zhao Xiuwen¹^ORCID

Affiliation:

1. School of Physics and Electronics, Shandong Normal University, Jinan, Shandong 250358, People’s Republic of China

2. Shandong Provincial Engineering and Technical Center of Light Manipulations & Institute of Materials and Clean Energy, Shandong Normal University, Jinan, Shandong 250358, People’s Republic of China

Funder

National Natural Science Foundation of China

Natural Science Foundation of Shandong Province

Shandong Province

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpclett.4c02090

Reference47 articles.

1. Valleytronics in 2D materials

2. Valley-Contrasting Physics in Graphene: Magnetic Moment and Topological Transport

3. Valley-selective circular dichroism of monolayer molybdenum disulphide

4. THz induced giant spin and valley currents

5. Excitonic devices with van der Waals heterostructures: valleytronics meets twistronics

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