Fractional Marcus–Hush–Chidsey–Yakopcic current–voltage model for redox-based resistive memory devices-Reference-Cited by-同舟云学术

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Fractional Marcus–Hush–Chidsey–Yakopcic current–voltage model for redox-based resistive memory devices

Published:2024 Issue:1 Volume:26 Page:621-627
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Paradezhenko G. V.¹,Prodan D. V.¹,Pervishko A. A.¹²^ORCID,Yudin D.¹²,Allagui A.³⁴^ORCID

Affiliation:

1. Skolkovo Institute of Science and Technology, Moscow 121205, Russia

2. Institute of High Technologies and Advanced Materials, Far Eastern Federal University, Vladivostok 690922, Russia

3. Department of Sustainable and Renewable Energy Engineering, University of Sharjah, P.O. Box 27272, Sharjah, United Arab Emirates

4. Department of Mechanical and Materials Engineering, Florida International University, Miami, FL 33174, USA

Abstract

We propose a circuit-level model supplemented with memory trace for describing electrical behavior of redox-based resistive memory devices.

Funder

Megagrants

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2024/CP/D3CP04177H

Reference53 articles.

1. High‐Speed and Low‐Energy Nitride Memristors

2. 2D Layered Materials for Memristive and Neuromorphic Applications

3. Organic electronics for neuromorphic computing

4. Carbon nanomaterials for non-volatile memories

5. Neuromorphic nanoelectronic materials

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