Halide Perovskites for Neuromorphic Computing

Author:

Vasilopoulou Maria1,Davazoglou Konstantinos2,Mohd Yusoff Abd Rashid bin3,Chai Yang45,Noh Yong-Young3,Anthopoulos Thomas6,Nazeeruddin Mohammad Khaja7

Affiliation:

1. aInstitute of Nanoscience and Nanotechnology, National Centre for Scientific Research Demokritos, 15341, Agia Paraskevi, Attica, Greece

2. bDepartment of Informatics and Telecommunications, National and Kapodistrian University of Athens, GR 15784 Athens, Greece

3. cDepartment of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Gyeongbuk 37673, Republic of Korea

4. dDepartment of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China

5. eThe Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, China

6. fPhysical Science and Engineering Division, KAUST Solar Center (KSC), King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia

7. gInstitute of Chemical Sciences and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Rue de l’Industrie 17, CH-1951 Sion, Switzerland

Abstract

The next generation of neuromorphic computing, which is related to emulating the neural structure and operation of the human brain, will extend into areas that correspond to human cognition, such as interpretation and autonomous adaptation. Progress in materials and devices is critical to address novel situations and abstraction to automate ordinary human activities. Halide perovskites constitute a family of materials with many superior properties, such as long charge-carrier diffusion length, strong light absorptivity, ambipolar charge transport, ionic conductivity and solution processability. They have been successfully implemented in broad applications such as photovoltaics, light-emitting diodes and photodetectors. Their high mobility renders this class of solution-processed materials appropriate for application in field-effect transistors, whereas their usually present hysteresis, which may originate from ferroelectricity, charge-carrier traps, and migration of ions, has been explored for application in artificial synapses, which require gradual modulation of responses.

Publisher

Royal Society of Chemistry

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