Effects of GaxZn1−xO nanorods on the photoelectric properties of n-ZnO nanorods/p-GaN heterojunction light-emitting diodes
Author:
Affiliation:
1. Key Laboratory of Interface Science and Engineering in Advanced Materials
2. Ministry of Education
3. Taiyuan University of Technology
4. Taiyuan 030024
5. China
Abstract
A Ga-doped ZnO nanorod array has been synthesized on a p-GaN/Al2O3 substrate by a hydrothermal method at low temperature.
Funder
Natural Science Foundation of Shanxi Province
National Natural Science Foundation of China
Publisher
Royal Society of Chemistry (RSC)
Subject
General Chemical Engineering,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2017/RA/C7RA09250D
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1. Fabrication of n-type ZnO nanowire/graphene/p-type silicon hybrid structures and electrical properties of heterojunctions
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4. Slanted n-ZnO/p-GaN nanorod arrays light-emitting diodes grown by oblique-angle deposition
5. Light-extraction enhancement of a GaN-based LED covered with ZnO nanorod arrays
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