High-performance low-temperature solution-processable ZnO thin film transistors by microwave-assisted annealing-Reference-Cited by-同舟云学术

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High-performance low-temperature solution-processable ZnO thin film transistors by microwave-assisted annealing

Published:2011 Issue:4 Volume:21 Page:1102-1108
ISSN:0959-9428
Container-title:J. Mater. Chem.
language:en
Short-container-title:J. Mater. Chem.

Author:

Jun Taehwan,Song Keunkyu,Jeong Youngmin,Woo Kyoohee,Kim Dongjo,Bae Changdeuck,Moon Jooho

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2011/JM/C0JM02178D

Reference22 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Amorphous oxide channel TFTs

3. Amorphous IZO TTFTs with saturation mobilities exceeding 100 cm2/Vs

4. Recent advances in ZnO transparent thin film transistors

5. Flexible Electronics

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