InAs quantum dot in a needlelike tapered InP nanowire: a telecom band single photon source monolithically grown on silicon-Reference-Cited by-同舟云学术

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InAs quantum dot in a needlelike tapered InP nanowire: a telecom band single photon source monolithically grown on silicon

Published:2019 Issue:45 Volume:11 Page:21847-21855
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Jaffal Ali¹²³⁴⁵^ORCID,Redjem Walid⁶⁷⁸⁹¹⁰,Regreny Philippe¹²³¹¹¹²,Nguyen Hai Son¹²³¹¹¹²,Cueff Sébastien¹²³¹¹¹²,Letartre Xavier¹²³¹¹¹²,Patriarche Gilles¹³¹⁴¹⁵¹⁶¹⁰^ORCID,Rousseau Emmanuel⁶⁷⁸⁹¹⁰^ORCID,Cassabois Guillaume⁶⁷⁸⁹¹⁰,Gendry Michel¹²³¹¹¹²,Chauvin Nicolas¹²³⁴⁵^ORCID

Affiliation:

1. Université de Lyon

2. Institut des Nanotechnologies de Lyon

3. UMR 5270 CNRS

4. INSA de Lyon

5. 69621 Villeurbanne cedex

6. Université de Montpellier

7. Laboratoire Charles Coulomb

8. UMR 5221 CNRS

9. F-34095 Montpellier Cedex 5

10. France

11. Ecole Centrale de Lyon

12. 69134 Ecully cedex

13. Université Paris-Saclay

14. Centre de Nanosciences et de Nanotechnologies

15. UMR 9001 CNRS

16. 91120 Palaiseau

Abstract

Fabrication of a NW-based single photon source on silicon emitting in the telecom band with a Gaussian far-field emission profile.

Funder

Agence Nationale de la Recherche

Deutsche Forschungsgemeinschaft

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2019/NR/C9NR06114B

Reference49 articles.

1. Silicon Quantum Photonics

2. Highly integrated optical phased arrays: photonic integrated circuits for optical beam shaping and beam steering

3. Bright room temperature single photon source at telecom range in cubic silicon carbide

4. K. Mnaymneh , D.Dalacu , J.McKee , J.Lapointe , S.Haffouz , P. J.Poole , G. C.Aers and R. L.Williams

5. Hybrid Integration of Solid-State Quantum Emitters on a Silicon Photonic Chip

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