Multiscale simulation of extreme ultraviolet nanolithography: impact of acid–base reaction on pattern roughness-Reference-Cited by-同舟云学术

Multiscale simulation of extreme ultraviolet nanolithography: impact of acid–base reaction on pattern roughness

Author:

Lee Hyungwoo¹²³⁴⁵^ORCID,Park Sungwoo¹²³⁴⁵,Kim Muyoung¹²³⁴⁵,Moon Junghwan⁶³⁴⁵,Lee Byunghoon⁷⁸⁹⁵,Cho Maenghyo¹²³⁴⁵^ORCID

Affiliation:

1. Division of Multiscale Mechanical Design

2. School of Mechanical and Aerospace Engineering

3. Seoul National University

4. Seoul

5. Republic of Korea

6. Institute of Advanced Machines and Design

7. Mask Development Team

8. Samsung Electronics CO., Ltd.

9. Suwon

Abstract

Impact of acid–base neutralization in EUV lithography was investigated using our newly developed multi-scale framework (DFT-MD-FDM).

Funder

Samsung

National Research Foundation of Korea

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

Reference58 articles.

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