Engineered cation vacancy plane responsible for the reduction in lattice thermal conductivity and improvement in the thermoelectric property of Ga2Te3-based semiconductors-Reference-Cited by-同舟云学术

Engineered cation vacancy plane responsible for the reduction in lattice thermal conductivity and improvement in the thermoelectric property of Ga2Te3-based semiconductors

Published:2014 Issue:64 Volume:4 Page:34104-34109
ISSN:2046-2069
Container-title:RSC Adv.
language:en
Short-container-title:RSC Adv.

Author:

Tian Dingqi¹²³⁴⁵,Liu Haiyun¹²³,Deng Yuan⁶⁷⁸,Du Zhengliang⁴⁵⁹¹⁰,Cui Jiaolin⁴⁵⁹¹⁰

Affiliation:

1. Materials Science and Engineering College

2. Taiyuan University of Technology

3. Taiyuan 030024, China

4. Institute of Materials Engineering

5. School of Materials

6. Beijing Key Laboratory of Special Functional Materials and Films, School of Materials Science and Engineering

7. Beihang University

8. Beijing 100191, China

9. Ningbo University of Technology

10. Ningbo 315016, China

Abstract

An effective route: vacancy plane engineering in Ga₂Te₃ to reduce the lattice thermal conductivity and improve the thermoelectric performance significantly.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2014/RA/C4RA04463K

Reference47 articles.

1. Thermoelectric properties ofp-type CuInSe2chalcopyrites enhanced by introduction of manganese

2. Unexpectedly low thermal conductivity in natural nanostructured bulk Ga2Te3

3. Enhanced Thermoelectric Figure of Merit of p-Type Half-Heuslers

4. Complex thermoelectric materials

5. New Directions for Low-Dimensional Thermoelectric Materials

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