Interface modification of sputtered NiOx as the hole-transporting layer for efficient inverted planar perovskite solar cells-Reference-Cited by-同舟云学术

Interface modification of sputtered NiOx as the hole-transporting layer for efficient inverted planar perovskite solar cells

Published:2020 Issue:6 Volume:8 Page:1972-1980
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Zheng Xiaolu¹²³⁴⁵,Song Zhaoning⁴⁵⁶⁷^ORCID,Chen Zhiliang¹²³,Bista Sandip Singh⁴⁵⁶⁷,Gui Pengbin¹²³,Shrestha Niraj⁴⁵⁶⁷,Chen Cong¹²³⁴⁵,Li Chongwen⁴⁵⁶⁷,Yin Xinxing⁴⁵⁶⁷,Awni Rasha A.⁴⁵⁶⁷,Lei Hongwei⁸⁹¹⁰³,Tao Chen¹²³^ORCID,Ellingson Randy J.⁴⁵⁶⁷^ORCID,Yan Yanfa⁴⁵⁶⁷^ORCID,Fang Guojia¹²³¹¹¹²^ORCID

Affiliation:

1. Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University

2. Wuhan

3. P. R. China

4. Department of Physics and Astronomy and Wright Center for Photovoltaics Innovation and Commercialization

5. The University of Toledo

6. Toledo

7. USA

8. College of Science

9. Huazhong Agricultural University

10. Wuhan 430070

11. Shenzhen Institute

12. Wuhan University

Abstract

An appropriately combined triple interface modification, i.e., post-annealing, O₂-plasma, and KCl treatments, is employed to ameliorate the optoelectronic properties of sputtered NiO_x films and achieve better device performance.

Funder

National Natural Science Foundation of China

Air Force Research Laboratory

China Scholarship Council

Special Foundation for the Development of Strategic Emerging Industries of Shenzhen

Department of Science and Technology, Hubei Provincial People's Government

Fundamental Research Funds for the Central Universities

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

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