Diverse interface effects on ferroelectricity and magnetoelectric coupling in asymmetric multiferroic tunnel junctions: the role of the interfacial bonding structure-Reference-Cited by-同舟云学术

Diverse interface effects on ferroelectricity and magnetoelectric coupling in asymmetric multiferroic tunnel junctions: the role of the interfacial bonding structure

Published:2016 Issue:4 Volume:18 Page:2850-2858
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Liu X. T.¹²³⁴⁵,Chen W. J.¹²³⁴⁵,Jiang G. L.¹²³⁴⁵,Wang B.¹²³⁴⁵,Zheng Yue¹²³⁴⁵

Affiliation:

1. State Key Laboratory of Optoelectronic Materials and Technologies

2. School of Physics and Engineering

3. Sun Yat-sen University

4. Guangzhou

5. China

Abstract

Ferroelectric stability and the interfacial magnetoelectric effect show strong dependence on the interfacial bonding structure in asymmetric tunnel junctions.

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2016/CP/C5CP05207F

Reference42 articles.

1. Towards a magnetoelectric memory

2. Multiferroic memories

3. The emergence of spin electronics in data storage

4. Giant tunnel electroresistance for non-destructive readout of ferroelectric states

5. Eight logic states of tunneling magnetoelectroresistance in multiferroic tunnel junctions

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