Self-consistently derived sample permittivity in stabilization of ferroelectricity due to charge accumulated at interfaces-Reference-Cited by-同舟云学术

Self-consistently derived sample permittivity in stabilization of ferroelectricity due to charge accumulated at interfaces

Published:2022 Issue:9 Volume:24 Page:5419-5430
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Teodorescu Cristian M.¹^ORCID

Affiliation:

1. National Institute of Materials Physics, Atomiştilor 405A, 077125 Măgurele-Ilfov, Romania

Abstract

The dielectric permittivity introduced in the stabilization energy of ferroelectricity by charges accumulated at surfaces or interfaces depends on polarization and temperature.

Funder

Unitatea Executiva pentru Finantarea Invatamantului Superior, a Cercetarii, Dezvoltarii si Inovarii

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2022/CP/D1CP05222E

Reference26 articles.

1. Ferroelectricity in thin films driven by charges accumulated at interfaces

2. Polarization induced self-doping in epitaxial Pb(Zr0.20Ti0.80)O3 thin films

3. Polarization Orientation in Lead Zirconate Titanate (001) Thin Films Driven by the Interface with the Substrate

4. Diverse interface effects on ferroelectricity and magnetoelectric coupling in asymmetric multiferroic tunnel junctions: the role of the interfacial bonding structure

5. Interface and surface stabilization of the polarization in ferroelectric thin films

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