Crucial role of reactive pulse-gas on a sputtered Zn3N2 thin film formation

Author:

Khemasiri Narathon12345,Chananonnawathorn Chanunthorn6784,Klamchuen Annop9784,Jessadaluk Sukittaya123410,Pankiew Apirak6784,Vuttivong Sirajit6784,Eiamchai Pitak6784,Horprathum Mati6784,Pornthreeraphat Suppanit6784,Kasamechonchung Panita9784,Tantisantisom Kittipong9784,Boonkoom Thitikorn9784,Songsiririthigul Prayoon1112134,Nakajima Hideki14134,Nukeaw Jiti12345

Affiliation:

1. College of Nanotechnology

2. King Mongkut's Institute of Technology Ladkrabang

3. Bangkok 10520

4. Thailand

5. Thailand Center of Excellence in Physics

6. National Electronics and Computer Technology Center (NECTEC)

7. NSTDA

8. Pathum Thani

9. National Nanotechnology Center (NANOTEC)

10. Nanotec-KMITL Center of Excellence Nanoelectronic Devices

11. NANOTEC-SUT Center of Excellence on Advanced Functional Nanomaterials and School of Physics

12. Suranaree University of Technology

13. Nakhon Ratchasima 30000

14. Synchrotron Light Research Institute

Abstract

Herein, we demonstrate a powerful technique, known as reactive gas-timing (RGT) rf magnetron sputtering, to fabricate high quality Zn3N2 thin films at room temperature without applying any additional energy sources.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

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