Atomic layer deposition of Zn3N2 thin films: growth mechanism and application in thin film transistor
Author:
Affiliation:
1. Department of Energy Science and Engineering
2. IIT Bombay
3. Mumbai 400076
4. India
5. Department of Chemistry
Abstract
DFT study of the growth mechanism of atomic layer deposited Zn3N2 thin film applied as a channel layer of TFT.
Publisher
Royal Society of Chemistry (RSC)
Subject
General Chemical Engineering,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2015/RA/C4RA12776E
Reference39 articles.
1. Band-gap energy and electron effective mass of polycrystalline Zn3N2
2. Thin film transistors based on zinc nitride as a channel layer for optoelectronic devices
3. Optical properties of zinc nitride formed by molten salt electrochemical process
4. On the true optical properties of zinc nitride
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