Observation of the planar Hall effect in the quasi-two-dimensional topological insulator candidate Ni3Bi2Se2-Reference-Cited by-同舟云学术

Observation of the planar Hall effect in the quasi-two-dimensional topological insulator candidate Ni₃Bi₂Se₂

Published:2024 Issue:35 Volume:12 Page:13840-13846
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Ma Yuzhe¹²,Sun Wen¹²,Xu Qiunan³,Wang Xinming²⁴,Aqeel Aisha⁵⁶⁷,Li Guowei¹²^ORCID

Affiliation:

1. CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China

2. University of Chinese Academy of Sciences, 19 A Yuquan Rd, Shijingshan District, Beijing 100049, China

3. Qingdao Institute for Theoretical and Computational Sciences Shandong University, Qingdao 266237, China

4. Public Technical Service Center, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China

5. Physics Department, Technical University of Munich, Garching, Germany

6. Munich Center for Quantum Science and Technology (MCQST), Munich, Germany

7. Institute of Physics, University of Augsburg, Augsburg, Germany

Abstract

Single crystals of the topological insulator candidate Ni3Bi2Se2 were grown, which exhibit a clear planar Hall effect (PHE) with π-period. The parametric plot indicates that the observed PHE primarily arises from in-plane orbital magnetoresistance.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/TC/D4TC01382D

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